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| LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P-Channel SOT-23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc-dc converters, load switching, power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones. * Energy Efficient * Miniature SOT-23 Surface Mount Package Saves Board Space 3 Drain LBSS84LT1 3 1 2 SOT -23 1 Gate - 2 Source Marking Diagram MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 50 20 130 520 225 - 55 to 150 556 260 mW C C/W C Unit Vdc Vdc mA PD W W = Work Week ORDERING INFORMATION Device LBSS84LT Package SOT-23 Shipping 3000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. LBSS84LT1 -1/4 LESHAN RADIO COMPANY, LTD. LBSS84LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate-Source Threaded Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain-to-Source On-Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2.) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD - - - - - 2.5 0.130 0.520 - V A (VDD = -15 Vdc, ID = -2.5 Adc, 15 2.5 RL = 50 ) td(on) tr td(off) tf QT - - - - - 2.5 1.0 16 8.0 6000 - - - - - pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss - - - 30 10 5.0 - - - pF VGS(th) rDS(on) |yfs| 0.8 - 50 - 5.0 - 2.0 10 - Vdc Ohms mS V(BR)DSS IDSS - - - IGSS - - - - - 0.1 15 60 60 Adc 50 - - Vdc Adc Symbol Min Typ Max Unit TYPICAL ELECTRICAL CHARACTERISTICS 0.6 I D , DRAIN CURRENT (AMPS) 0.5 0.4 0.3 0.2 0.1 0 1 1.5 2 2.5 3 3.5 4 VDS = 10 V -55C 25C 150C 0.5 0.45 I D , DRAIN CURRENT (AMPS) 0.4 0.3 0.2 0.1 0 0.35 3.0 V 2.75 V 2.5 V 2.25 V 0 1 2 3 4 5 6 7 8 9 10 TJ = 25C VGS = 3.5 V 3.25 V 0.25 0.15 0.05 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On-Region Characteristics LBSS84LT1 -2/4 LESHAN RADIO COMPANY, LTD. LBSS84LT1 TYPICAL ELECTRICAL CHARACTERISTICS R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 9 8 7 6 5 4 3 2 0 0.1 0.2 0.3 0.4 -55C 25C R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 0 0.1 0.2 0.3 0.4 -55C 0.5 0.6 25C VGS = 10 V VGS = 4.5 V 150C 150C 0.5 0.6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -55 -5 45 95 145 VGS = 10 V ID = 0.52 A Figure 4. On-Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 7 6 5 4 3 2 1 0 0 VDS = 40 V TJ = 25C VGS = 4.5 V ID = 0.13 A ID = 0.5 A 500 1000 1500 2000 TJ, JUNCTION TEMPERATURE (C) QT, TOTAL GATE CHARGE (pC) Figure 5. On-Resistance Variation with Temperature 1 I D , DIODE CURRENT (AMPS) Figure 6. Gate Charge 0.1 TJ = 150C 25C -55C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage LBSS84LT1 -3/4 LESHAN RADIO COMPANY, LTD. LBSS84LT1 SOT-23 NOTES: A L 3 1 V G 2 BS DIM A B C D G H J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 C D H K J PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LBSS84LT1 -4 /4 |
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